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Package Marking and Ordering Information
Device Marking
FDB12N50
Device
FDB12N50TM
Package
D 2 -PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 ? A, V GS = 0V, T J = 25 o C
I D = 250 ? A, Referenced to 25 o C
V DS = 500V, V GS = 0V
V DS = 400V, T C = 125 o C
V GS = ±30V, V DS = 0V
500
-
-
-
-
-
0.66
-
-
-
-
-
1
10
±100
V
V/ o C
? A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 ? A
V GS = 10V, I D = 6A
V DS = 25V, I D = 6A
3.0
-
-
-
0.55
11
5.0
0.65
-
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V
f = 1MHz
-
-
-
985
140
12
1315
190
17
pF
pF
pF
Q g
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 400V, I D = 11.5A
V GS = 10V
(Note 4)
-
-
-
22
6
10
30
-
-
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 250V, I D = 11.5A
R G = 25 ?
(Note 4)
-
-
-
-
25
60
45
35
60
130
105
85
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
11.5
46
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I SD = 11.5A
V GS = 0V, I SD = 11.5A
dI F /dt = 100A/ ? s
-
-
-
-
370
3.8
1.4
-
-
V
ns
?? C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, I AS = 11.5A, V DD = 50V, R G = 25 ? , Starting T J = 25 ? C
3. I SD ? 11.5A, di/dt ? 200A/ ? s, V DD ? BV DSS , Starting T J = 25 ? C
4. Essentially Independent of Operating Temperature Typical Characteristics
?2007 Fairchild Semiconductor Corporation
FDB12N50TM Rev. C1
2
www.fairchildsemi.com
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